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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors BC817-16WT1 NPN Silicon 3 COLLECT OR BC817-40YLT1 is LRC Preferred Device 3 1 B ASE 2 EMIT T ER 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Characteristic Total Device Dissipation FR-5 Board, (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature RJA Tj ,Tstg o o CASE 419-02, STYLE 2 SOT-323 (SC-70) Symbol VCEO VCBO VEBO IC Value 45 50 5 500 Symbol PD Unit V V V mAdc Max 225 Unit mW mW/oC o THERMAL CHARATEERISTICS o o 1.8 RJA PD 300 2.4 417 -55 to +150 556 C/W mW mW/oC o C/W o C DEVICE MARKING BC817-16WT1=6A ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol V(BR)CEO V(BR)CES V(BR)EBO ICBO IEBO Min 45 50 5 100 100 V nA nA Typ Max Unit V OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC=10mA) Collector-Emitter Breakdown Voltage (IC=10 A) Emitter-Base Breakdown Voltage (IE=10 A) Collector Cutoff Current (VCB=30V) Emitter Cutoff Current (VBE=7V) BC817-16WT1-1/2 LESHAN RADIO COMPANY, LTD. BC817-16WT1 ON CHARACTERISTICS DC Current Gain (1) (IC=100mA, VCE=1.0V) DC Current Gain (1) (IC=500mA, VCE=1.0V) Collector-Emitter Saturation Voltage (1) (IC=500mA,IB=50mA) Base-Emitter On Voltage (1) IC=300mA,VCE=1.0V) Hfe1 Hfe2 VCE(SAT) VBE(ON) 100 40 250 0.7 1.2 V V SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC =10mA, VCE =Vdc, f =100MHz) Output Capacitance (VCB=10V, f =1.0MHz) (1) Note: Pulse width 300Sec.,Duty cycle 2.0% fT Cobo 100 - - 10 - - MHz pF BC817-16WT1-2/2 |
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